Specification	SCT4065DEC11

Current - Continuous Drain (Id) (Tj)	25 A
Drain to Source Voltage (Vdss)	750 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	48 nC
Input Capacitance (Ciss) (Max)	1066 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Package Name	TO-247N
Power Dissipation (Max)	88 W
Rds On (Max)	85 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	21 V
Vgs(th) (Max)	4.8 V

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