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GSES12VD1006-2B

GSES12VD1006-2B

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Good-Ark Semiconductor

TVS DIODE 12VWM 26VC DFN10062L

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GSES12VD1006-2B

GSES12VD1006-2B

Active
Good-Ark Semiconductor

TVS DIODE 12VWM 26VC DFN10062L

Find alt

Description

General part information

GSES12VD1006-2B

TVS DIODE 12VWM 26VC DFN10062L

Technical Specifications

Parameters and characteristics for this part

SpecificationGSES12VD1006-2B
ApplicationsCAN
Bidirectional Channels1
Capacitance9.3 pF
Current - Peak Pulse5 A
Mounting TypeSurface Mount
Operating Temperature (Max)125 °C
Operating Temperature (Min)-55 °C
Package / Case0402 (1006 Metric), DFN1006
Package NameDFN1006-2, DFN1006-2L
Power - Peak Pulse150 W
Power Line ProtectionNo
Voltage - Breakdown (Min)13.3 V
Voltage - Clamping (Max)26 V
Voltage - Reverse Standoff (Max)12 V

Pricing

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CAD

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Documents

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