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Description

General part information

AON6562

MOSFET N-CH 30V 29A/32A 8DFN

Technical Specifications

Parameters and characteristics for this part

SpecificationAON6562
Current - Continuous Drain (Id) (Ta)29 A
Current - Continuous Drain (Id) (Tc)32 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)33 nC
Input Capacitance (Ciss) (Max)1550 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-VDFN Exposed Pad
Package Length5 mm
Package Name8-DFN
Package Width6 mm
Power Dissipation (Max)6 W, 25 W
Rds On (Max)5 mOhm, 5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

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