Description
General part information
ISZ15EP15LMATMA1
OptiMOS™ P-channel MOSFETs150 V inPQFN 3.3x3.3package represents the new technology targeted forbattery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISZ15EP15LMATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 820 mA |
| Current - Continuous Drain (Id) (Tc) | 2.7 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 14 nC |
| Input Capacitance (Ciss) (Max) | 480 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8-26 |
| Power Dissipation (Max) | 2.5 W, 26.3 W |
| Rds On (Max) | 1.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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