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IRFP4137PBF

IRFP4137PBF

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INFINEON

IR MOSFET™ N-CHANNEL ; TO-247 PACKAGE; 69 MOHM;

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IRFP4137PBF

IRFP4137PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL ; TO-247 PACKAGE; 69 MOHM;

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Description

General part information

IRFP4137PBF

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFP4137PBF
Current - Continuous Drain (Id) (Tc)38 A
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)125 nC, 125 nC
Input Capacitance (Ciss) (Max)5.168 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247AC
Power Dissipation (Max)341 W
Rds On (Max)69 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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Documents

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