IRLD120PBF
ObsoletePOWER MOSFET, N CHANNEL, 100 V, 1.3 A, 0.27 OHM, HVMDIP, THROUGH HOLE
IRLD120PBF
ObsoletePOWER MOSFET, N CHANNEL, 100 V, 1.3 A, 0.27 OHM, HVMDIP, THROUGH HOLE
Description
General part information
IRLD120PBF
The IRLD120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRLD120PBF |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.3 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4 V |
| Drive Voltage (Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 490 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.3 in |
| Package Name | 4-HVMDIP, 4-DIP |
| Package Width | 7.62 mm |
| Power Dissipation (Max) | 1.3 W |
| Rds On (Max) | 270 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources