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FFAF10U170STU

IRFAF40

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INFINEON

N-CHANNEL HERMETIC MOS HEXFET

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FFAF10U170STU

IRFAF40

Active
INFINEON

N-CHANNEL HERMETIC MOS HEXFET

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Description

General part information

IRFAF40

N-Channel 900 V 4.3A (Tc) 125W (Tc) Through Hole TO-204AA (TO-3)

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFAF40
Current - Continuous Drain (Id) (Tc)4.3 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)120 nC
Input Capacitance (Ciss) (Max)1500 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-3, TO-204AA
Package NameTO-204AA (TO-3)
Power Dissipation (Max)125 W
Rds On (Max)2.9 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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