GE10MPS06E-TR
ActiveGeneSiC Semiconductor
DIODE SIL CARB 650V 26A TO2522
GE10MPS06E-TR
ActiveGeneSiC Semiconductor
DIODE SIL CARB 650V 26A TO2522
Description
General part information
GE10MPS06E-TR
DIODE SIL CARB 650V 26A TO2522
Technical Specifications
Parameters and characteristics for this part
| Specification | GE10MPS06E-TR |
|---|---|
| Capacitance | 466 pF |
| Current - Average Rectified (Io) | 26 A |
| Current - Reverse Leakage | 5 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available