Specification	GT040N10M

Current - Continuous Drain (Id) (Tc)	140 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V, 10 V
Drive Voltage (Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Max)	100 nC, 36 nC, 36 nC
Input Capacitance (Ciss) (Max)	2150 pF, 5920 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK, TO-263
Power Dissipation (Max)	200 W, 200 W
Rds On (Max)	4 mOhm, 10.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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