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NDS9407

NDS9407

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 60 V, 3 A, 0.078 OHM, SOIC, SURFACE MOUNT

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NDS9407

NDS9407

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 60 V, 3 A, 0.078 OHM, SOIC, SURFACE MOUNT

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Description

General part information

NDS9407

The NDS9407 is a P-channel MOSFET produced using rugged gate version of advanced PowerTrench® process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 to 20V). It is suitable for load switch and battery protection applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNDS9407
Current - Continuous Drain (Id) (Ta)3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)22 nC
Input Capacitance (Ciss) (Max)732 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max)150 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part