Description
General part information
IGK080B041SXTSA1
MV GAN DISCRETES
Technical Specifications
Parameters and characteristics for this part
| Specification | IGK080B041SXTSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 35 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 5.3 nC |
| Input Capacitance (Ciss) (Max) | 370 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | WLBGA, 16-UFBGA |
| Package Name | SG-UFWLB-16-2 |
| Power Dissipation (Max) | 1.6 W, 21 W |
| Rds On (Max) | 8 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Negative | -40 V |
| Vgs (Max) Positive | 6 V |
| Vgs(th) (Max) | 2.9 V |
Pricing
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CAD
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