Description
General part information
BSO615CGXUMA1
Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Technical Specifications
Parameters and characteristics for this part
| Specification | BSO615CGXUMA1 |
|---|---|
| Configuration | N, P-Channel |
| Current - Continuous Drain (Id) (Ta) | 3.1 A |
| Current - Continuous Drain (Id) (Ta) (2) | 2 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 20 nC, 22.5 nC |
| Input Capacitance (Ciss) (Max) | 460 pF, 380 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | PG-DSO-8, 8-SOIC |
| Package Width | 3.9 mm |
| Power - Max (Ta) | 2 W |
| Rds On (Max) | 300 mOhm, 110 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2 V, 2 V |
Pricing
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CAD
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