Description
General part information
IMCQ120R034M2HXTMA1
CoolSiC™ MOSFET discrete1200 V, 34 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMCQ120R034M2HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 64 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 48.7 nC |
| Input Capacitance (Ciss) (Max) | 1920 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Package Name | PG-HDSOP-22-3 |
| Power Dissipation (Max) | 326 W |
| Rds On (Max) | 34 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.1 V |
Pricing
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