Specification	AONS66612T

Current - Continuous Drain (Id) (Ta)	48 A
Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	110 nC
Input Capacitance (Ciss) (Max)	5300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-PowerSMD
Package Length	5 mm
Package Name	8-DFN
Package Width	6 mm
Power Dissipation (Max)	250 W, 7.5 W
Rds On (Max)	1.65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

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