
MT53E1G64D4HJ-046 AAT:C
ActiveDRAM, MOBILE LPDDR4, 64 GBIT, 1G X 64BIT, 2.133 GHZ, TFBGA, 556 PINS

MT53E1G64D4HJ-046 AAT:C
ActiveDRAM, MOBILE LPDDR4, 64 GBIT, 1G X 64BIT, 2.133 GHZ, TFBGA, 556 PINS
Description
General part information
MT53E1G64D4HJ-046 AAT:C
MT53E1G64D4HJ-046 AAT:C is a LPDDR4 SDRAM. It is a high-speed, CMOS dynamic random-access memory device. This memory is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks. It has programmable VSS (ODT) termination and single-ended CK and DQS support. This memory has directed per-bank refresh for concurrent bank operation and ease of command scheduling.
Technical Specifications
Parameters and characteristics for this part
| Specification | MT53E1G64D4HJ-046 AAT:C |
|---|---|
| Access Time | 3.5 ns |
| Clock Frequency | 2.133 GHz |
| Grade | Automotive |
| Memory Depth | 1 G |
| Memory Format | DRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 64 GBIT |
| Memory Type | Volatile |
| Memory Width | 64 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 105 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 556-TFBGA |
| Package Length | 12.4 mm |
| Package Name | 556-WFBGA |
| Package Width | 12.4 mm |
| Qualification | AEC-Q100 |
| Technology | SDRAM - Mobile LPDDR4X |
| Voltage - Supply (Maximum) | 1.17 V |
| Voltage - Supply (Minimum) | 1.06 V |
| Write Cycle Time - Page | 18 ns |
| Write Cycle Time - Word | 18 ns |
Pricing
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