VSMA1085750X02
ActiveVishay Semiconductor Opto Division
HIGH POWER INFRARED EMITTER, 850
VSMA1085750X02
ActiveVishay Semiconductor Opto Division
HIGH POWER INFRARED EMITTER, 850
Description
General part information
VSMA1085750X02
HIGH POWER INFRARED EMITTER, 850
Technical Specifications
Parameters and characteristics for this part
| Specification | VSMA1085750X02 |
|---|---|
| Current - DC Forward (If) (Max) | 1.5 A |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Orientation | Top View |
| Package / Case | No Lead, 3-SMD, 2-SMD |
| Qualification | AEC-Q102 |
| Radiant Intensity (Ie) Min | 370 mW/sr |
| Type | Infrared (IR) |
| Viewing Angle | 150 ° |
| Voltage - Forward (Vf) (Typ) | 3.2 V |
| Voltage - Forward (Vf) (Typ) Options | 3V, 3.9V, 2.8V, 3.2V |
| Wavelength | 850 nm |
Pricing
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