Description
General part information
IMZA65R083M1HXKSA1
CoolSiC™ MOSFETtechnology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R048M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both thelowest losses in the applicationand thehighest reliability in operation. Infineon’s SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMZA65R083M1HXKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 26 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 19 nC |
| Input Capacitance (Ciss) (Max) | 624 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | PG-TO247-4-3 |
| Power Dissipation (Max) | 104 W |
| Rds On (Max) | 111 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -2 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 5.7 V |
Pricing
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