
AOK150V120X2
ActiveAlpha & Omega Semiconductor Inc.
1200V SILICON CARBIDE MOSFET

AOK150V120X2
ActiveAlpha & Omega Semiconductor Inc.
1200V SILICON CARBIDE MOSFET
Description
General part information
AOK150V120X2
1200V SILICON CARBIDE MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | AOK150V120X2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 20 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 28.3 nC |
| Input Capacitance (Ciss) (Max) | 664 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power Dissipation (Max) | 115 W |
| Rds On (Max) | 195 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 15 V |
| Vgs(th) (Max) | 3.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources