Specification	IQEH80NE2LM7UCGSCATMA1

Current - Continuous Drain (Id) (Ta)	43 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	37 nC, 37 nC
Input Capacitance (Ciss) (Max)	3900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	9-PowerWDFN
Package Name	PG-WHTFN-9-1
Power Dissipation (Max)	107 W, 2.5 W
Rds On (Max)	0.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2 V

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