Specification	TW092V65C,LQ

Current - Continuous Drain (Id) (Tc)	27 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	28 nC
Input Capacitance (Ciss) (Max)	873 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	4-VSFN Exposed Pad
Package Length	8 mm
Package Name	4-DFN-EP
Package Width	8 mm
Power Dissipation (Max)	111 W
Rds On (Max)	136 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	5 V

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