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BY25Q256ESFIG(T)

BY25Q256ESFIG(T)

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BYTe Semiconductor

256 MBIT, 3.0V (2.7V TO 3.6V), -

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BY25Q256ESFIG(T)

BY25Q256ESFIG(T)

Active
BYTe Semiconductor

256 MBIT, 3.0V (2.7V TO 3.6V), -

Find alt

Description

General part information

BY25Q256ESFIG(T)

256 MBIT, 3.0V (2.7V TO 3.6V), -

Technical Specifications

Parameters and characteristics for this part

SpecificationBY25Q256ESFIG(T)
Access Time7 ns
Clock Frequency100 MHz
Memory Depth32 M
Memory FormatFLASH
Memory Interface (Type)SPI - Quad I/O, QPI, DTR
Memory Size256 Mbit
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length0.295 in
Package Name16-SOIC, 16-SOP
Package Width7.5 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page2.4 ms
Write Cycle Time - Word50 µs

Pricing

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CAD

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Documents

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