Specification	RQ3E180AJTB

Current - Continuous Drain (Id) (Ta)	18 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	39 nC
Input Capacitance (Ciss) (Max)	4290 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Package Length	3.2 mm
Package Name	8-HSMT
Package Width	3 mm
Power Dissipation (Max)	2 W, 30 W
Rds On (Max)	4.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

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