SF34GH

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF34GH

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

Part	Mounting Type	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Speed	Qualification	Package / Case	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation SF34GH	Through Hole	35 ns	950 mV	Automotive	150 °C	-55 °C	5 µA	200 mA 500 ns	AEC-Q101	DO-201AD Axial	DO-201AD	Standard	200 V	80 pF	3 A
Taiwan Semiconductor Corporation SF34G A0G	Through Hole	35 ns	950 mV		150 °C	-55 °C	5 µA	200 mA 500 ns		DO-201AD Axial	DO-201AD	Standard	200 V	80 pF	3 A
Taiwan Semiconductor Corporation SF34G B0G	Through Hole	35 ns	950 mV		150 °C	-55 °C	5 µA	200 mA 500 ns		DO-201AD Axial	DO-201AD	Standard	200 V	80 pF	3 A

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General part information

Diode 200 V 3A Through Hole DO-201AD

Technical documentation and resources