Description
General part information
IMDQ65R020M2HXUMA1
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMDQ65R020M2HXUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 97 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 57 nC |
| Input Capacitance (Ciss) (Max) | 2038 pF, 2038 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Package Name | PG-HDSOP-22-1 |
| Power Dissipation (Max) | 394 W |
| Rds On (Max) | 18 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources