Description
General part information
CY62177EV30LL-55BAXI
The CY62177EV30LL-55BAXI is a high-performance CMOS static RAM designed for ultra-low active current, ensuring efficient power management and providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. Its automatic power-down feature significantly reduces power consumption when addresses are not toggling, offering reliable performance with minimal power usage.
Technical Specifications
Parameters and characteristics for this part
| Specification | CY62177EV30LL-55BAXI |
|---|---|
| Access Time | 55 ns |
| Memory Depth (Option 1) | 4 M |
| Memory Depth (Option 2) | 2 M |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Organization | 2M x 16, 4M x 8 |
| Memory Size | 4 MB |
| Memory Type | Volatile |
| Memory Width (Option 1) | 8 bit |
| Memory Width (Option 2) | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 48-TFBGA |
| Package Length | 8 mm |
| Package Name | 48-FBGA |
| Package Width | 9.5 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 3.7 V |
| Voltage - Supply (Minimum) | 2.2 V |
| Write Cycle Time - Page | 55 ns |
| Write Cycle Time - Word | 55 ns |
Pricing
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CAD
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