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NVBG022N120M3S-IE

NVBG022N120M3S-IE

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ON Semiconductor

SIC MOS D2PAK-7L 22MOHM M3S 1200

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NVBG022N120M3S-IE

NVBG022N120M3S-IE

Active
ON Semiconductor

SIC MOS D2PAK-7L 22MOHM M3S 1200

Find alt

Description

General part information

NVBG022N120M3S-IE

SIC MOS D2PAK-7L 22MOHM M3S 1200

Technical Specifications

Parameters and characteristics for this part

SpecificationNVBG022N120M3S-IE
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)142 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)3175 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads7 Leads
Package NameD2PAK, D2PAK-7
Power Dissipation (Max)441 W
QualificationAEC-Q101
Rds On (Max)30 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-10 V
Vgs (Max) Positive22 V
Vgs(th) (Max)4.4 V

Pricing

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CAD

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Documents

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