ISC012N04LM6ATMA1

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Infineon Technologies

THE ISC012N04LM6 OPTIMOS™ 6 40V IN LOGIC LEVEL IS SETTING A NEW TECHNOLOGY STANDARD IN THE FIELD OF DISCRETE POWER MOSFETS.

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ISC012N04LM6ATMA1

Active

Infineon Technologies

THE ISC012N04LM6 OPTIMOS™ 6 40V IN LOGIC LEVEL IS SETTING A NEW TECHNOLOGY STANDARD IN THE FIELD OF DISCRETE POWER MOSFETS.

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ISC012N04LM6ATMA1

Current - Continuous Drain (Id) @ 25°C	238 A, 37 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3 W, 125 W
Rds On (Max) @ Id, Vgs	1.2 mOhm
Supplier Device Package	PG-TDSON-8 FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

ISC012N Series

Part	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies ISC012N04LM6ATMA1	PG-TDSON-8 FL	8-PowerTDFN	4600 pF	N-Channel	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	64 nC	3 W 125 W	1.2 mOhm	2.3 V	Surface Mount	40 V	4.5 V 10 V	37 A 238 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.98
		10	$ 1.93
		100	$ 1.34
		500	$ 1.08
		1000	$ 1.00
		2000	$ 0.94
	Digi-Reel®	1	$ 2.98
		10	$ 1.93
		100	$ 1.34
		500	$ 1.08
		1000	$ 1.00
		2000	$ 0.94
	Tape & Reel (TR)	5000	$ 0.94

Description

General part information

ISC012N Series

The ISC012N04LM6OptiMOSTM6 40Vin logic level is setting a new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits. Infineon’s OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification inswitched mode power supplies(SMPS) inservers,desktop PCs,wireless chargers,quick chargersand ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on)x Qgand Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.