
DMHC4035LSDQ-13
ActiveDiodes Inc
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
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DMHC4035LSDQ-13
ActiveDiodes Inc
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMHC4035LSDQ-13 |
|---|---|
| Configuration | 2 N and 2 P-Channel (Full Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 4.5 A, 3.7 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC |
| Gate Charge (Qg) (Max) @ Vgs | 11.1 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 574 pF, 587 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 65 mOhm, 45 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.09 | |
| 10 | $ 0.89 | |||
| 100 | $ 0.69 | |||
| 500 | $ 0.59 | |||
| 1000 | $ 0.48 | |||
| Digi-Reel® | 1 | $ 1.09 | ||
| 10 | $ 0.89 | |||
| 100 | $ 0.69 | |||
| 500 | $ 0.59 | |||
| 1000 | $ 0.48 | |||
| Tape & Reel (TR) | 2500 | $ 0.42 | ||
Description
General part information
DMHC4035LSDQ Series
This new generation complementary MOSFET H-Bridge features 2 N and 2 P channel in an SOIC package.
Documents
Technical documentation and resources