MBRF30L120CTHC0G

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Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 120V ITO220AB

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Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 120V ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	MBRF30L120CTHC0G

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	20 mA
Diode Configuration	1 Pair Common Cathode
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Grade	Voltage - Forward (Vf) (Max) @ If	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Mounting Type	Supplier Device Package	Technology
Taiwan Semiconductor Corporation MBRF30L120CTHC0G	Automotive	950 mV	AEC-Q101	150 °C	-55 °C	TO-220-3 Full Pack Isolated Tab	1 Pair Common Cathode	120 V	200 mA 500 ns	20 mA	30 A	Through Hole	ITO-220AB	Schottky
Taiwan Semiconductor Corporation MBRF30L45CT		740 mV		150 °C	-55 °C	TO-220-3 Full Pack Isolated Tab	1 Pair Common Cathode	45 V	200 mA 500 ns	400 µA	30 A	Through Hole	ITO-220AB	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 120 V 30A Through Hole TO-220-3 Full Pack, Isolated Tab

Technical documentation and resources

No documents available