18N10
ActiveGoford Semiconductor
N100V,RD(MAX)<53M@10V,RD(MAX)<63
18N10
ActiveGoford Semiconductor
N100V,RD(MAX)<53M@10V,RD(MAX)<63
Description
General part information
18N10
N-Channel 100 V 35A (Tc) 80W (Tc) Surface Mount TO-252
Technical Specifications
Parameters and characteristics for this part
| Specification | 18N10 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 35 A, 25 A, 25 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 26 nC |
| Input Capacitance (Ciss) (Max) | 2161 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 62.5 W, 80 W |
| Rds On (Max) | 53 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V, 3 V |
Pricing
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