TN2425N8-G

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Microchip Technology

MOSFET N-CH 250V 480MA SOT89-3

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Microchip Technology

MOSFET N-CH 250V 480MA SOT89-3

Technical Specifications

Parameters and characteristics for this part

Specification	TN2425N8-G

Current - Continuous Drain (Id) @ 25°C	480 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 3 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power Dissipation (Max)	1.6 W
Supplier Device Package	SOT-89-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

MOSFET N-CH 250V 480MA SOT89-3

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology TN2425N8-G	250 V	SOT-89-3	2.5 V	20 V	480 mA	Surface Mount	-55 °C	150 °C	N-Channel	TO-243AA	1.6 W	MOSFET (Metal Oxide)	3 V, 10 V	200 pF

General part information

N-Channel 250 V 480mA (Tj) 1.6W (Tc) Surface Mount SOT-89-3

Technical documentation and resources