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A1N5404G-G

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Comchip Technology

DIODE GEN PURP 400V 3A DO27

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A1N5404G-G

Active
Comchip Technology

DIODE GEN PURP 400V 3A DO27

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationA1N5404G-G
Capacitance @ Vr, F50 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseAxial, DO-27, DO-201AA
QualificationAEC-Q101
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-27
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.43
10$ 0.37
100$ 0.25
500$ 0.20
Tape & Box (TB) 1200$ 0.19
2400$ 0.17
3600$ 0.16
6000$ 0.15
8400$ 0.14
12000$ 0.14
30000$ 0.12
60000$ 0.12

A1N5404 Series

DIODE GEN PURP 400V 3A DO27

PartVoltage - DC Reverse (Vr) (Max) [Max]TechnologyPackage / CaseCurrent - Reverse Leakage @ VrSupplier Device PackageQualificationSpeedSpeedCapacitance @ Vr, FCurrent - Average Rectified (Io)GradeVoltage - Forward (Vf) (Max) @ IfOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Mounting Type
Comchip Technology
A1N5404G-G
400 V
Standard
Axial, DO-201AA, DO-27
5 µA
DO-27
AEC-Q101
Standard Recovery >500ns
200 mA
50 pF
3 A
Automotive
1.1 V
150 °C
-55 °C
Through Hole

Description

General part information

A1N5404 Series

Diode 400 V 3A Through Hole DO-27

Documents

Technical documentation and resources

No documents available