GPI65008DF56
ActiveGaNPower
GANFET N-CH 650V 8A DFN5X6
GPI65008DF56
ActiveGaNPower
GANFET N-CH 650V 8A DFN5X6
Description
General part information
GPI65008DF56
N-Channel 650 V 8A Surface Mount Die
Technical Specifications
Parameters and characteristics for this part
| Specification | GPI65008DF56 |
|---|---|
| Current - Continuous Drain (Id) | 8 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 2.1 nC |
| Input Capacitance (Ciss) (Max) | 63 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | Die |
| Package Name | Die |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Negative | -12 V |
| Vgs (Max) Positive | 7.5 V |
| Vgs(th) (Max) | 1.4 V |
Pricing
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CAD
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Documents
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