VQ1006P

Obsolete

Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

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Obsolete

Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

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General part information

Mosfet Array 90V 400mA 2W Through Hole 14-DIP

Technical documentation and resources

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Specification	VQ1006P	VQ1006 Series

Configuration	4 N-Channel	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	400 mA	400 mA
Drain to Source Voltage (Vdss)	90 V	90 V
FET Feature	Logic Level Gate	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	60 pF	60 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Power - Max [Max]	2 W	2 W
Rds On (Max) @ Id, Vgs	4.5 Ohm	4.5 Ohm
Supplier Device Package	14-DIP	14-DIP
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Configuration	FET Feature	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Mounting Type
Vishay Siliconix VQ1006P-2	-55 °C	150 °C	2.5 V	2 W	400 mA	60 pF	4.5 Ohm	4 N-Channel	Logic Level Gate	14-DIP	90 V	MOSFET (Metal Oxide)	Through Hole
Vishay Siliconix VQ1006P	-55 °C	150 °C	2.5 V	2 W	400 mA	60 pF	4.5 Ohm	4 N-Channel	Logic Level Gate	14-DIP	90 V	MOSFET (Metal Oxide)	Through Hole