
G3R450MT17J-TR
ActiveGeneSiC Semiconductor
1700V 450M TO-263-7 G3R SIC MOSF

G3R450MT17J-TR
ActiveGeneSiC Semiconductor
1700V 450M TO-263-7 G3R SIC MOSF
Description
General part information
G3R450MT17J-TR
1700V 450M TO-263-7 G3R SIC MOSF
Technical Specifications
Parameters and characteristics for this part
| Specification | G3R450MT17J-TR |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 8 A |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 18 nC |
| Input Capacitance (Ciss) (Max) | 454 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | TO-263-7, D2PAK |
| Power Dissipation (Max) | 71 W |
| Rds On (Max) | 585 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 15 V |
| Vgs(th) (Max) | 2.7 V |
Pricing
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