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G3R450MT17J-TR

G3R450MT17J-TR

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GeneSiC Semiconductor

1700V 450M TO-263-7 G3R SIC MOSF

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G3R450MT17J-TR

G3R450MT17J-TR

Active
GeneSiC Semiconductor

1700V 450M TO-263-7 G3R SIC MOSF

Find alt

Description

General part information

G3R450MT17J-TR

1700V 450M TO-263-7 G3R SIC MOSF

Technical Specifications

Parameters and characteristics for this part

SpecificationG3R450MT17J-TR
Current - Continuous Drain (Id) (Tc)8 A
Drain to Source Voltage (Vdss)1700 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)18 nC
Input Capacitance (Ciss) (Max)454 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads7 Leads
Package NameTO-263-7, D2PAK
Power Dissipation (Max)71 W
Rds On (Max)585 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-5 V
Vgs (Max) Positive15 V
Vgs(th) (Max)2.7 V

Pricing

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CAD

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Documents

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