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BSC520N15NS3GATMA1

BSC520N15NS3GATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; SUPERSO8 5X6 PACKAGE; 50 MOHM;

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BSC520N15NS3GATMA1

BSC520N15NS3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; SUPERSO8 5X6 PACKAGE; 50 MOHM;

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Description

General part information

BSC520N15NS3GATMA1

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC520N15NS3GATMA1
Current - Continuous Drain (Id) (Tc)21 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On)8 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)12 nC
Input Capacitance (Ciss) (Max)890 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-5
Power Dissipation (Max)57 W
Rds On (Max)52 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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Documents

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