PCDB1065G1_R2_00001
ActivePanjit International Inc.
SIC SCHOTTKY DIODES 650V SIC SCHOTTKY BARRIER DIODE
PCDB1065G1_R2_00001
ActivePanjit International Inc.
SIC SCHOTTKY DIODES 650V SIC SCHOTTKY BARRIER DIODE
Description
General part information
PCDB1065G1_R2_00001
SIC SCHOTTKY DIODES 650V SIC SCHOTTKY BARRIER DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | PCDB1065G1_R2_00001 |
|---|---|
| Capacitance | 364 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 70 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
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CAD
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