Description
General part information
ISC750P10LMATMA1
OptiMOS™ P-channel MOSFETs100 V inSuperSO8package represents the new technology targeted forbattery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC750P10LMATMA1 |
|---|---|
| Current - Continuous Drain (Id) | 27.3 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type | P-Channel |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-7 |
| Technology | MOSFET (Metal Oxide) |
Pricing
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