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CBR1-D020 TIN/LEAD

CBR1-D020 TIN/LEAD

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Central Semiconductor Corp

1A 200V TH RECTIFIER-BRIDGE GENE

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CBR1-D020 TIN/LEAD

CBR1-D020 TIN/LEAD

Active
Central Semiconductor Corp

1A 200V TH RECTIFIER-BRIDGE GENE

Find alt

Description

General part information

CBR1-D020 TIN/LEAD

1A 200V TH RECTIFIER-BRIDGE GENE

Technical Specifications

Parameters and characteristics for this part

SpecificationCBR1-D020 TIN/LEAD
Current - Average Rectified (Io)1 A
Current - Reverse Leakage10 µA
Diode TypeSingle Phase
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package Length0.3 in
Package Name4-DIP, 4-EDIP
Package Width7.62 mm
TechnologyStandard
Voltage - Forward (Vf) (Max)1.1 V
Voltage - Peak Reverse (Max)200 V

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