Specification	IXTP08N100D2

Current - Continuous Drain (Id) (Tc)	800 mA
Drain to Source Voltage (Vdss)	1000 V
FET Type	Depletion Mode, N-Channel
Gate Charge (Max)	14.6 nC
Input Capacitance (Ciss) (Max)	325 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3
Power Dissipation (Max)	60 W
Rds On (Max)	21 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

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