Specification	FQI1P50TU

Current - Continuous Drain (Id) (Tc)	1.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	14 nC
Input Capacitance (Ciss) (Max)	350 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	TO-262 (I2PAK)
Power Dissipation (Max)	3.13 W, 63 W
Rds On (Max)	10.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

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