
S2M0016120D
ActiveSMC Diode Solutions
DIODE MOSFETS SILICON CARBIDES 1

S2M0016120D
ActiveSMC Diode Solutions
DIODE MOSFETS SILICON CARBIDES 1
Description
General part information
S2M0016120D
DIODE MOSFETS SILICON CARBIDES 1
Technical Specifications
Parameters and characteristics for this part
| Specification | S2M0016120D |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 140 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 224 nC |
| Input Capacitance (Ciss) (Max) | 6680 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247AD |
| Power Dissipation (Max) | 714 W |
| Rds On (Max) | 22.3 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 3.6 V |
Pricing
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CAD
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Documents
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