2SK1341-E

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 900V 6A 3000MOHM TO-3P

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 900V 6A 3000MOHM TO-3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SK1341-E

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	980 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Nch Single Power Mosfet 900V 6A 3000Mohm To-3P

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
Renesas Electronics Corporation 2SK1341-E	30 V	980 pF	MOSFET (Metal Oxide)	150 °C	SC-65-3, TO-3P-3	6 A	900 V	3 Ohm	Through Hole	TO-3P	N-Channel	10 V	100 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The 2SK1341 is a Nch Single Power Mosfet 900V 6A 3000Mohm To-3P.

Technical documentation and resources