HGTG12N60D1D
ActiveON Semiconductor
UFS SERIES N-CHANNEL IGBT
HGTG12N60D1D
ActiveON Semiconductor
UFS SERIES N-CHANNEL IGBT
Description
General part information
HGTG12N60D1D
IGBT 600 V 21 A 75 W Through Hole TO-247
Technical Specifications
Parameters and characteristics for this part
| Specification | HGTG12N60D1D |
|---|---|
| Current - Collector (Ic) (Max) | 21 A |
| Current - Collector Pulsed (Icm) | 48 A |
| Gate Charge | 70 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power - Max | 75 W |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available