IV1D12010O2
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DIODE SIL CARB 1200V 28A TO220
IV1D12010O2
ActiveInventchip
DIODE SIL CARB 1200V 28A TO220
Description
General part information
IV1D12010O2
DIODE SIL CARB 1200V 28A TO220
Technical Specifications
Parameters and characteristics for this part
| Specification | IV1D12010O2 |
|---|---|
| Capacitance | 575 pF |
| Current - Average Rectified (Io) | 28 A |
| Current - Reverse Leakage | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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