GB02SHT06-46
ObsoleteGeneSiC Semiconductor
DIODE SIL CARBIDE 600V 4A TO46
GB02SHT06-46
ObsoleteGeneSiC Semiconductor
DIODE SIL CARBIDE 600V 4A TO46
Description
General part information
GB02SHT06-46
DIODE SIL CARBIDE 600V 4A TO46
Technical Specifications
Parameters and characteristics for this part
| Specification | GB02SHT06-46 |
|---|---|
| Capacitance | 76 pF |
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 225 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-46-3 Metal Can, TO-206AB |
| Package Name | TO-46 |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources