Description
General part information
CY62167DV30LL-55BVXIT
CY62167DV30LL-55BVXIT is a high-performance CMOS static RAM organized as 1M words by 16-bits. This device features an advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (active low CE1 HIGH or CE2 LOW or both active low BHE and active low BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (active low CE1 HIGH or CE2 LOW), outputs are disabled (active low OE HIGH), both Byte High Enable and Byte Low Enable are disabled (active low BHE, active low BLE HIGH), or during a Write operation (active low CE1 LOW, CE2 HIGH and active low WE LOW).
Technical Specifications
Parameters and characteristics for this part
| Specification | CY62167DV30LL-55BVXIT |
|---|---|
| Access Time | 55 ns |
| Memory Depth | 1 M |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 16 Mb |
| Memory Type | Volatile |
| Memory Width | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 48-VFBGA |
| Package Length | 8 mm |
| Package Name | 48-VFBGA |
| Package Width | 9.5 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 2.2 V |
| Write Cycle Time - Page | 55 ns |
| Write Cycle Time - Word | 55 ns |
Pricing
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