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CY62167DV30LL-55BVXIT

CY62167DV30LL-55BVXIT

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INFINEON

SRAM, ASYNCHRONOUS SRAM, 16 MBIT, 1M X 16BIT, VFBGA, 48 PINS, 2.2 V

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CY62167DV30LL-55BVXIT

CY62167DV30LL-55BVXIT

Active
INFINEON

SRAM, ASYNCHRONOUS SRAM, 16 MBIT, 1M X 16BIT, VFBGA, 48 PINS, 2.2 V

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Description

General part information

CY62167DV30LL-55BVXIT

CY62167DV30LL-55BVXIT is a high-performance CMOS static RAM organized as 1M words by 16-bits. This device features an advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (active low CE1 HIGH or CE2 LOW or both active low BHE and active low BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (active low CE1 HIGH or CE2 LOW), outputs are disabled (active low OE HIGH), both Byte High Enable and Byte Low Enable are disabled (active low BHE, active low BLE HIGH), or during a Write operation (active low CE1 LOW, CE2 HIGH and active low WE LOW).

Technical Specifications

Parameters and characteristics for this part

SpecificationCY62167DV30LL-55BVXIT
Access Time55 ns
Memory Depth1 M
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size16 Mb
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case48-VFBGA
Package Length8 mm
Package Name48-VFBGA
Package Width9.5 mm
TechnologySRAM - Asynchronous
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.2 V
Write Cycle Time - Page55 ns
Write Cycle Time - Word55 ns

Pricing

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