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MT53E768M32D2ZW-046 AAT:C

MT53E768M32D2ZW-046 AAT:C

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Micron Technology Inc.

IC DRAM 24GBIT 200TFBGA

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MT53E768M32D2ZW-046 AAT:C

MT53E768M32D2ZW-046 AAT:C

Active
Micron Technology Inc.

IC DRAM 24GBIT 200TFBGA

Find alt

Description

General part information

MT53E768M32D2ZW-046 AAT:C

IC DRAM 24GBIT 200TFBGA

Technical Specifications

Parameters and characteristics for this part

SpecificationMT53E768M32D2ZW-046 AAT:C
Access Time3.5 ns
Clock Frequency2.133 GHz
GradeAutomotive
Memory Depth768 M
Memory FormatDRAM
Memory Interface (Type)LVSTL
Memory Size24 Gbit
Memory TypeVolatile
Memory Width32 bit
Mounting TypeSurface Mount
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package / Case200-TFBGA
Package Length10 mm
Package Name200-TFBGA
Package Width14.5 mm
QualificationAEC-Q100
TechnologySDRAM - Mobile LPDDR4X
Voltage - Supply (Maximum)1.17 V
Voltage - Supply (Minimum)1.06 V
Write Cycle Time - Page18 ns
Write Cycle Time - Word18 ns

Pricing

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CAD

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Documents

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