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2SD1816S-H

2SD1816S-H

Obsolete
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 4 A, 20 W, TO-251 (IPAK), THROUGH HOLE

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2SD1816S-H

2SD1816S-H

Obsolete
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 4 A, 20 W, TO-251 (IPAK), THROUGH HOLE

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Description

General part information

2SD1816S-H

2SD1816 is a Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single TP/TP-FA for high-Current Switching Application.

Technical Specifications

Parameters and characteristics for this part

Specification2SD1816S-H
Current - Collector (Ic) (Max)4 A
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)140
Frequency - Transition180 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NameTP
Power - Max1 VA
Transistor TypeNPN
Vce Saturation (Max)400 mV
Voltage - Collector Emitter Breakdown (Max)100 V

Pricing

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CAD

3D models and CAD resources for this part