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SI7106DN-T1-GE3

SI7106DN-T1-GE3

Active
Vishay Dale

MOSFET N-CH 20V 12.5A PPAK1212-8

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SI7106DN-T1-GE3

SI7106DN-T1-GE3

Active
Vishay Dale

MOSFET N-CH 20V 12.5A PPAK1212-8

Find alt

Description

General part information

SI7106DN-T1-GE3

MOSFET N-CH 20V 12.5A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7106DN-T1-GE3
Current - Continuous Drain (Id) (Ta)12.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeN-Channel
Gate Charge (Max)27 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® 1212-8
Package NamePowerPAK® 1212-8
Power Dissipation (Max)1.5 W
Rds On (Max)6.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)1.5 V

Pricing

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CAD

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Documents

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